Samsung and Broadcom Sign MOU for Enhanced Collaboration in AI Memory and Foundry Technologies
Samsung Electronics and Broadcom have signed a memorandum of understanding (MOU) to strengthen their partnership in memory and foundry technologies, focusing on next-generation artificial intelligence infrastructure. The collaboration is projected to involve projects worth over $200 billion through 2030. Announced at the AI Summit in San Francisco, it includes plans for Samsung's high bandwidth memory (HBM) supply for Broadcom’s future AI accelerators and utilization of Samsung’s advanced process technologies down to 2nm for Broadcom products. The partnership also explores advanced packaging techniques such as 2.3D and 2.5D integration using Samsung’s cutting-edge processes, aiming to improve performance and energy efficiency in AI chips. Both companies aim to leverage their combined strengths—Samsung's memory and foundry capabilities alongside Broadcom's leadership in connectivity—to deliver innovative semiconductor solutions for the evolving AI landscape.
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Topics: AI foundry technologies HBM semiconductors